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SuperSOT SOT23 NPN SILICON POWER (SWITCHING) TRANSISTORS
ISSUE 3 - NOVEMBER 1995 FEATURES
FMMT617 FMMT618 FMMT619 FMMT624 FMMT625
*
* * * * *
625mW POWER DISSIPATION
IC CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed) Extremely Low Saturation Voltage E.g. 8mV Typ. Extremely Low Equivalent On Resistance; RCE(sat) C B E
DEVICE TYPE FMMT617 FMMT618 FMMT619 FMMT624 FMMT625
COMPLEMENT FMMT717 FMMT718 FMMT720 FMMT723
PARTMARKING 617 618 619 624 625
RCE(sat) 50m at 3A 50m at 2A 75m at 2A -
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current** Continuous Collector Current Base Current Power Dissipation at Tamb=25C* SYMBOL VCBO VCEO VEBO ICM IC IB Ptot FMMT FMMT FMMT FMMT FMMT 617 618 619 624 625 15 15 5 12 3 20 20 5 6 2.5 50 50 5 6 2 500 625 -55 to +150 125 125 5 3 1 150 150 5 3 1 UNIT V V V A A mA mW C
Operating and Storage Temperature Tj:Tstg Range
* Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm **Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for these devices
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FMMT624 FMMT625
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(SAT) 26 70 160 165 VBE(SAT) VBE(ON) hFE 200 300 100 100 0.85 0.7 400 450 140 18 155
FMMT624
MIN. 125 125 TYP. 250 160 150 150 5 100 100 100 50 150 220 250 1.0 1.0 200 300 30 100 15
FMMT625
TYP. 300 175 8.3 MAX.
MAX. MIN.
UNIT CONDITIONS. V V V nA nA nA nA nA mV mV mV mV mV V V IC=100A IC=10mA* IE=100A VCB=100V VCB=130V VEB=4V VCES=100V VCES=130V IC=0.1A, IB=10mA* IC=0.1A, IB=1mA* IC=0.5A, IB=50mA* IC=0.5A, IB=10mA* IC=1A, IB=50mA* IC=1A, IB=50mA* IC=1A, VCE=10V* IC=10mA, VCE=10V* IC=0.2A, VCE=10V* IC=1A, VCE=10V* IC=3A, VCE=10V* MHz IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz VCC=50V, IC=0.5A IB1=-IB2=50mA
5
8.3
100 100
100 26 110 180 0.85 0.74 400 450 45 15 135 6 160 1500 10 50 200 300 1.0 1.0
Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Turn-On Time Turn-Off Time
fT COBO t(ON) t(OFF)
7 60
1300
pF ns ns
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
3 - 155
FMMT624
TYPICAL CHARACTERISTICS
25 C I+/I*=20
0.5 0.4 0.3 0.2 0.1 0.0 1mA 10mA 100mA 1A 10A
I+/I*=50 I+/I*=20 I+/I*=10
0.5 0.4 0.3
100C
0.2 0.1 0.0 1mA 10mA
25C -55C
100mA
1A
10A
Collector Current
Collector Current
VCE(SAT) vs IC
1.0 1.2
100C V+-=10V
VCE(SAT) vs IC
I+/I*=20 -55C
1.0 0.8 0.6 0.4 0.2 0.0 1mA 10mA 100mA 1A
-55C 25C
450
0.8 0.6
25C
100C
225
0.4 0.2 0.0
10A
1mA
10mA
100mA
1A
10A
Collector Current
Collector Current
hFE vs IC
1.2 1.0 0.8 0.6 0.4 0.2 0.0 1mA 10mA 100mA 1A 10A 0.01 1.0
-55C
VBE(SAT) vs IC
10 SINGLE PULSE TEST Tamb = 25 deg C
V+-=10V
1.0
25C 100C
0.1
D.C. 1s 100ms 10ms 1ms 100s
10
100
1000
Collector Current
VCE (VOLTS)
VBE(ON) vs IC
3 - 156
Safe Operating Area
FMMT617 FMMT624 FMMT618 FMMT625 FMMT619
SuperSOT Series
FMMT717 FMMT722 FMMT718 FMMT723 FMMT720
THERMAL CHARACTERISTICS AND DERATING INFORMATION
DERATING CURVE
MAXIMUM TRANSIENT THERMAL RESISTANCE * Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate
3 - 158

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